Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation
Author
Source
Active and Passive Electronic Components
Issue
Vol. 2011, Issue 2011 (31 Dec. 2011), pp.1-8, 8 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2011-09-15
Country of Publication
Egypt
No. of Pages
8
Main Subjects
Abstract EN
We propose a high-temperature-operation (HTOT) SOI MOSFET and show preliminary simulation results of its characteristics.
It is demonstrated that HTOT SOI MOSFET operates safely at 700 K with no thermal instability because of its expanded effective bandgap.
It is shown that its threshold voltage is higher than that of the conventional SOI MOSFET because its local thin Si regions offer an expanded effective band gap.
It is shown that HTOT SOI MOSFET with 1-nm-thick local-thin Si regions is almost insensitive to temperature for T<700 K (427 C).
This confirms that HTOT SOI MOSFET is a promising device for future high-temperature applications.
American Psychological Association (APA)
Omura, Yasuhisa. 2011. Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation. Active and Passive Electronic Components،Vol. 2011, no. 2011, pp.1-8.
https://search.emarefa.net/detail/BIM-503218
Modern Language Association (MLA)
Omura, Yasuhisa. Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation. Active and Passive Electronic Components No. 2011 (2011), pp.1-8.
https://search.emarefa.net/detail/BIM-503218
American Medical Association (AMA)
Omura, Yasuhisa. Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation. Active and Passive Electronic Components. 2011. Vol. 2011, no. 2011, pp.1-8.
https://search.emarefa.net/detail/BIM-503218
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-503218