Modeling Surface Recombination at the p-Type SiSiO2Interface via Dangling Bond Amphoteric Centers
Joint Authors
Kamal, Husain A.
Ghannam, Moustafa Y.
Source
Advances in Condensed Matter Physics
Issue
Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-9, 9 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2014-03-12
Country of Publication
Egypt
No. of Pages
9
Main Subjects
Abstract EN
An integral model is proposed for recombination at the silicon/silicon dioxide (Si/SiO2) interface of thermally oxidized p-type silicon via Pb amphoteric centers associated with surface dangling bonds.
The proposed model is a surface adaptation of a model developed for bulk recombination in amorphous silicon based on Sah-Shockley statistics which is more appropriate for amphoteric center recombination than classical Shockley-Read-Hall statistics.
It is found that the surface recombination via amphoteric centers having capture cross-sections larger for charged centers than for neutral centers is distinguished from Shockley-Read-Hall recombination by exhibiting two peaks rather than one peak when plotted versus surface potential.
Expressions are derived for the surface potentials at which the peaks occur.
Such a finding provides a firm and plausible interpretation for the double peak surface recombination current measured in gated diodes or gated transistors.
Successful fitting is possible between the results of the model and reported experimental curves showing two peaks for surface recombination velocity versus surface potential.
On the other hand, if charged and neutral center capture cross-sections are equal or close to equal, surface recombination via amphoteric centers follows the same trend as Shockley-Read-Hall recombination and both models lead to comparable surface recombination velocities.
American Psychological Association (APA)
Ghannam, Moustafa Y.& Kamal, Husain A.. 2014. Modeling Surface Recombination at the p-Type SiSiO2Interface via Dangling Bond Amphoteric Centers. Advances in Condensed Matter Physics،Vol. 2014, no. 2014, pp.1-9.
https://search.emarefa.net/detail/BIM-503864
Modern Language Association (MLA)
Ghannam, Moustafa Y.& Kamal, Husain A.. Modeling Surface Recombination at the p-Type SiSiO2Interface via Dangling Bond Amphoteric Centers. Advances in Condensed Matter Physics No. 2014 (2014), pp.1-9.
https://search.emarefa.net/detail/BIM-503864
American Medical Association (AMA)
Ghannam, Moustafa Y.& Kamal, Husain A.. Modeling Surface Recombination at the p-Type SiSiO2Interface via Dangling Bond Amphoteric Centers. Advances in Condensed Matter Physics. 2014. Vol. 2014, no. 2014, pp.1-9.
https://search.emarefa.net/detail/BIM-503864
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-503864