Ultrathin te films on si (111)‎ : schottky barrier formation ang photovoltaic applications

Abstract EN

In this work, ultrathin trillium films were evaporated on chemically etched silicon substrate.

Schottky barrier heights (SBHs) of Te contacting to n-Si were determined by analyzing dark current-Voltage (I-V) curves and illuminated short circuit current-open circuit voltage (Isc-Voc) curves.

To eliminate the effect of series resistance we used Norde method to extract effective SBHs.

Experimental results showed good reasonable agreement of the barrier height values.

There is more than one mechanism to transport the current through the barrier.

The possibility of using Te-nSi as a photovoltaic device is presented in this work.