TiAl Ohmic Contacts to n-Type GaN Nanowires

Abstract EN

Titanium/aluminum ohmic contacts to tapered n-type GaN nanowires with triangular cross-sections were studied.

To extract the specific contact resistance, the commonly used transmission line model was adapted to the particular nanowire geometry.

The most Al-rich composition of the contact provided a low specific contact resistance (mid 10−8 Ωcm2) upon annealing at 600 °C for 15 s, but it exhibited poor thermal stability due to oxidation of excess elemental Al remaining after annealing, as revealed by transmission electron microscopy.

On the other hand, less Al-rich contacts required higher annealing temperatures (850 or 900 °C) to reach a minimum specific contact resistance but exhibited better thermal stability.

A spread in the specific contact resistance from contact to contact was tentatively attributed to the different facets that were contacted on the GaN nanowires with a triangular cross-section.