Laser-Induced Defects in a Bulk GaAs Used as an Output Coupler in an Nd : YAG Laser Cavity
Joint Authors
Payziyev, Sh.
Shayimov, F.
Bakhramov, S.
Kasimov, A.
Source
Journal of Atomic, Molecular, and Optical Physics
Issue
Vol. 2011, Issue 2011 (31 Dec. 2011), pp.1-4, 4 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2011-04-19
Country of Publication
Egypt
No. of Pages
4
Main Subjects
Abstract EN
By using bulk GaAs as an output coupler as well as a saturable absorber, with changing of concentration of defects inside the laser cavity, Q-switching of flashlamp-pumped Nd : YAG laser has been studied.
It is shown that the formation of the laser pulses, in a wide range of duration, which were reported in a lot of previous papers is caused by the intracavity changes of the defect concentration in GaAs.
The factor of increase in defect concentration is estimated by modeling of the pulse formation process.
American Psychological Association (APA)
Payziyev, Sh.& Bakhramov, S.& Kasimov, A.& Shayimov, F.. 2011. Laser-Induced Defects in a Bulk GaAs Used as an Output Coupler in an Nd : YAG Laser Cavity. Journal of Atomic, Molecular, and Optical Physics،Vol. 2011, no. 2011, pp.1-4.
https://search.emarefa.net/detail/BIM-505621
Modern Language Association (MLA)
Payziyev, Sh.…[et al.]. Laser-Induced Defects in a Bulk GaAs Used as an Output Coupler in an Nd : YAG Laser Cavity. Journal of Atomic, Molecular, and Optical Physics No. 2011 (2011), pp.1-4.
https://search.emarefa.net/detail/BIM-505621
American Medical Association (AMA)
Payziyev, Sh.& Bakhramov, S.& Kasimov, A.& Shayimov, F.. Laser-Induced Defects in a Bulk GaAs Used as an Output Coupler in an Nd : YAG Laser Cavity. Journal of Atomic, Molecular, and Optical Physics. 2011. Vol. 2011, no. 2011, pp.1-4.
https://search.emarefa.net/detail/BIM-505621
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-505621
