Fabrication of Self-Aligned Graphene FETs with Low Fringing Capacitance and Series Resistance
Joint Authors
Miao, Congqin
Zhang, Ming
Xie, Ya-Hong
Woo, Jason C. S.
Wang, Yanjie
Huang, Bo-Chao
Source
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-7, 7 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-09-12
Country of Publication
Egypt
No. of Pages
7
Main Subjects
Abstract EN
Graphene FETs with top-gate and buried-gate structure has been studied.
The buried-gate structure shows less fringing capacitance and more reliable contacts.
High-performance graphene transistors with self-aligned buried gates have been fabricated.
The graphene transistor shows field-effect mobility of over 6,000 cm2/V · s according to the transconductance measurement.
The contact resistance and intrinsic mobility have been extracted from both curve fitting and transfer length measurement, and the two results agree well.
This result paves the way of high-quality graphene transistor technology for the RF application.
American Psychological Association (APA)
Wang, Yanjie& Huang, Bo-Chao& Zhang, Ming& Miao, Congqin& Xie, Ya-Hong& Woo, Jason C. S.. 2012. Fabrication of Self-Aligned Graphene FETs with Low Fringing Capacitance and Series Resistance. ISRN Electronics،Vol. 2012, no. 2012, pp.1-7.
https://search.emarefa.net/detail/BIM-505841
Modern Language Association (MLA)
Wang, Yanjie…[et al.]. Fabrication of Self-Aligned Graphene FETs with Low Fringing Capacitance and Series Resistance. ISRN Electronics No. 2012 (2012), pp.1-7.
https://search.emarefa.net/detail/BIM-505841
American Medical Association (AMA)
Wang, Yanjie& Huang, Bo-Chao& Zhang, Ming& Miao, Congqin& Xie, Ya-Hong& Woo, Jason C. S.. Fabrication of Self-Aligned Graphene FETs with Low Fringing Capacitance and Series Resistance. ISRN Electronics. 2012. Vol. 2012, no. 2012, pp.1-7.
https://search.emarefa.net/detail/BIM-505841
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-505841