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A Substrate Current Less Control Method for CMOS Integration of Power Bridges
Joint Authors
Hauswald, Heiko
Naumann, Ronny
Krupar, Joerg
Source
Issue
Vol. 2010, Issue 2010 (31 Dec. 2010), pp.1-11, 11 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2010-09-23
Country of Publication
Egypt
No. of Pages
11
Main Subjects
Abstract EN
Modern electronical devices use high integration to decrease device size and cost and to increase reliability.
More and more devices appear that integrate even power devices into VLSI circuits.
When driving inductive loads, this is a critical step because freewheeling at a power device appears.
In these applications usually special technologies with extra wells for the power devices, SOI technologies, or BiCMOS technologies are required to suppress any substrate current.
However, the use of these technologies results in higher production cost for the device.
We present a method to control the freewheeling actively.
Using this approach we are able to integrate the power devices using a normal CMOS technology.
American Psychological Association (APA)
Krupar, Joerg& Hauswald, Heiko& Naumann, Ronny. 2010. A Substrate Current Less Control Method for CMOS Integration of Power Bridges. Advances in Power Electronics،Vol. 2010, no. 2010, pp.1-11.
https://search.emarefa.net/detail/BIM-507332
Modern Language Association (MLA)
Krupar, Joerg…[et al.]. A Substrate Current Less Control Method for CMOS Integration of Power Bridges. Advances in Power Electronics No. 2010 (2010), pp.1-11.
https://search.emarefa.net/detail/BIM-507332
American Medical Association (AMA)
Krupar, Joerg& Hauswald, Heiko& Naumann, Ronny. A Substrate Current Less Control Method for CMOS Integration of Power Bridges. Advances in Power Electronics. 2010. Vol. 2010, no. 2010, pp.1-11.
https://search.emarefa.net/detail/BIM-507332
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-507332