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Growth of AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition
Joint Authors
Ramelan, A. H.
Arifin, P.
Harjana, H.
Source
Advances in Materials Science and Engineering
Issue
Vol. 2010, Issue 2010 (31 Dec. 2010), pp.1-8, 8 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2010-10-25
Country of Publication
Egypt
No. of Pages
8
Main Subjects
Engineering Sciences and Information Technology
Abstract EN
Epitaxial AlxGa1-xSb layers on GaAs substrate have been grown by atmospheric pressure metalorganic chemical vapour deposition using TMAl, TMGa, and TMSb.
We report the effect of V/III flux ratio and growth temperature on growth rate, surface morphology, electrical properties, and composition analysis.
A growth rate activation energy of 0.73 eV was found.
For layers grown on GaAs at 580∘C and 600∘C with a V/III ratio of 3 a high quality surface morphology is typical, with a mirror-like surface and good composition control.
It was found that a suitable growth temperature and V/III flux ratio was beneficial for producing good AlGaSb layers.
Undoped AlGaSb grown at 580∘C with a V/III flux ratio of 3 at the rate of 3.5 μm/hour shows p-type conductivity with smooth surface morphology and its hole mobility and carrier concentration are equal to 237 cm2/V.s and 4.6 × 1017 cm-3, respectively, at 77 K.
The net hole concentration of unintentionally doped AlGaSb was found to be significantly decreased with the increased of aluminium concentration.
All samples investigated show oxide layers (Al2O3, Sb2O3, and Ga2O5) on their surfaces.
In particular the percentage of aluminium-oxide was very high compared with a small percentage of AlSb.
Carbon content on the surface was also very high.
American Psychological Association (APA)
Ramelan, A. H.& Harjana, H.& Arifin, P.. 2010. Growth of AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition. Advances in Materials Science and Engineering،Vol. 2010, no. 2010, pp.1-8.
https://search.emarefa.net/detail/BIM-508399
Modern Language Association (MLA)
Ramelan, A. H.…[et al.]. Growth of AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition. Advances in Materials Science and Engineering No. 2010 (2010), pp.1-8.
https://search.emarefa.net/detail/BIM-508399
American Medical Association (AMA)
Ramelan, A. H.& Harjana, H.& Arifin, P.. Growth of AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition. Advances in Materials Science and Engineering. 2010. Vol. 2010, no. 2010, pp.1-8.
https://search.emarefa.net/detail/BIM-508399
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-508399