Contribution of Series Resistance in Modelling of High-Temperature Type II Superlattice p-i-n Photodiodes
Joint Authors
Rogalski, Antoni
Martyniuk, Piotr
Wróbel, Jarosław
Source
Advances in Optical Technologies
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-5, 5 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-11-19
Country of Publication
Egypt
No. of Pages
5
Main Subjects
Engineering Sciences and Information Technology
Abstract EN
We analyze some of the consequences of omitting series resistance in InAs/GaSb p-i-n T2SL photodiode dark current modelling, using simplified p-n junction model.
Our considerations are limited to generation-recombination and diffusion-effective carrier lifetimes to show the possible scale of over- or underestimating photodiodes parameters in high-temperature region.
As is shown, incorrect series resistance value might cause discrepancies in τgr and τdiff's estimations over one order of magnitude.
American Psychological Association (APA)
Wróbel, Jarosław& Martyniuk, Piotr& Rogalski, Antoni. 2012. Contribution of Series Resistance in Modelling of High-Temperature Type II Superlattice p-i-n Photodiodes. Advances in Optical Technologies،Vol. 2012, no. 2012, pp.1-5.
https://search.emarefa.net/detail/BIM-508678
Modern Language Association (MLA)
Wróbel, Jarosław…[et al.]. Contribution of Series Resistance in Modelling of High-Temperature Type II Superlattice p-i-n Photodiodes. Advances in Optical Technologies No. 2012 (2012), pp.1-5.
https://search.emarefa.net/detail/BIM-508678
American Medical Association (AMA)
Wróbel, Jarosław& Martyniuk, Piotr& Rogalski, Antoni. Contribution of Series Resistance in Modelling of High-Temperature Type II Superlattice p-i-n Photodiodes. Advances in Optical Technologies. 2012. Vol. 2012, no. 2012, pp.1-5.
https://search.emarefa.net/detail/BIM-508678
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-508678
