The Effect of Ga2Se3 Doping Ratios on Structure, Composition, and Electrical Properties of CuIn0.5Ga0.5Se2 Absorber Formed by Thermal Sintering
Joint Authors
Chang, Ming Wei
Liu, Chung Ping
Chuang, Chuan Lung
Source
International Journal of Photoenergy
Issue
Vol. 2013, Issue 2013 (31 Dec. 2013), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2013-11-20
Country of Publication
Egypt
No. of Pages
6
Main Subjects
Abstract EN
Chalcopyrite compounds of copper indium gallium diselenide (CIGS) absorber were fabricated by using binary-particle (Cu2Se, In2Se3, and Ga2Se3) precursors with thermal sintering method.
The binary-particle ink was firstly prepared by milling technology and then printed onto a soda lime glass substrate, which was baked at a low temperature to remove solvents and form a dry precursor.
Following milling, the average particle size of agglomerated CIGS powder is smaller than 1.1 μm.
Crystallographic, stoichiometric, and electrical properties of precursor CIGS films with various doping amounts of Ga2Se3 had been widely investigated by using thermal sintering in a nonvacuum environment without selenization.
Analytical results reveal that the CIGS absorption layer prepared with a Ga2Se3 doping ratio of 3 has a chalcopyrite structure and favorable composition.
The mole ratio of Cu : In : Ga : Se of this sample was 1.03 : 0.49 : 0.54 : 1.94, and related ratios of Ga/(In + Ga) and Cu/(In + Ga) were 0.52 and 0.99, respectively.
The resistivity and carrier concentration were 3.77 ohm-cm and 1.15 E + 18 cm-3.
American Psychological Association (APA)
Liu, Chung Ping& Chang, Ming Wei& Chuang, Chuan Lung. 2013. The Effect of Ga2Se3 Doping Ratios on Structure, Composition, and Electrical Properties of CuIn0.5Ga0.5Se2 Absorber Formed by Thermal Sintering. International Journal of Photoenergy،Vol. 2013, no. 2013, pp.1-6.
https://search.emarefa.net/detail/BIM-509568
Modern Language Association (MLA)
Liu, Chung Ping…[et al.]. The Effect of Ga2Se3 Doping Ratios on Structure, Composition, and Electrical Properties of CuIn0.5Ga0.5Se2 Absorber Formed by Thermal Sintering. International Journal of Photoenergy No. 2013 (2013), pp.1-6.
https://search.emarefa.net/detail/BIM-509568
American Medical Association (AMA)
Liu, Chung Ping& Chang, Ming Wei& Chuang, Chuan Lung. The Effect of Ga2Se3 Doping Ratios on Structure, Composition, and Electrical Properties of CuIn0.5Ga0.5Se2 Absorber Formed by Thermal Sintering. International Journal of Photoenergy. 2013. Vol. 2013, no. 2013, pp.1-6.
https://search.emarefa.net/detail/BIM-509568
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-509568