Full-Wave Analysis of Traveling-Wave Field-Effect Transistors Using Finite-Difference Time-Domain Method
Author
Source
International Journal of Antennas and Propagation
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-9, 9 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-01-15
Country of Publication
Egypt
No. of Pages
9
Main Subjects
Abstract EN
Nonlinear transmission lines, which define transmission lines periodically loaded with nonlinear devices such as varactors, diodes, and transistors, are modeled in the framework of finite-difference time-domain (FDTD) method.
Originally, some root-finding routine is needed to evaluate the contributions of nonlinear device currents appropriately to the temporally advanced electrical fields.
Arbitrary nonlinear transmission lines contain large amount of nonlinear devices; therefore, it costs too much time to complete calculations.
To reduce the calculation time, we recently developed a simple model of diodes to eliminate root-finding routines in an FDTD solver.
Approximating the diode current-voltage relation by a piecewise-linear function, an extended Ampere's law is solved in a closed form for the time-advanced electrical fields.
In this paper, we newly develop an FDTD model of field-effect transistors (FETs), together with several numerical examples that demonstrate pulse-shortening phenomena in a traveling-wave FET.
American Psychological Association (APA)
Narahara, Koichi. 2012. Full-Wave Analysis of Traveling-Wave Field-Effect Transistors Using Finite-Difference Time-Domain Method. International Journal of Antennas and Propagation،Vol. 2012, no. 2012, pp.1-9.
https://search.emarefa.net/detail/BIM-510620
Modern Language Association (MLA)
Narahara, Koichi. Full-Wave Analysis of Traveling-Wave Field-Effect Transistors Using Finite-Difference Time-Domain Method. International Journal of Antennas and Propagation No. 2012 (2012), pp.1-9.
https://search.emarefa.net/detail/BIM-510620
American Medical Association (AMA)
Narahara, Koichi. Full-Wave Analysis of Traveling-Wave Field-Effect Transistors Using Finite-Difference Time-Domain Method. International Journal of Antennas and Propagation. 2012. Vol. 2012, no. 2012, pp.1-9.
https://search.emarefa.net/detail/BIM-510620
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-510620