Study of the P-Type Doping Properties of ZnS Nanocrystals
Author
Source
Issue
Vol. 2011, Issue 2011 (31 Dec. 2011), pp.1-5, 5 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2010-08-11
Country of Publication
Egypt
No. of Pages
5
Main Subjects
Engineering Sciences and Information Technology
Chemistry
Civil Engineering
Abstract EN
The paper presents the study of p-type doping properties of ZnS nanocrystals (Ncs) using the local density approximation theory (LDA).
Doping with single species of N, P, or As, ZnS nanocrystals are found to have a low-doping concentration and efficiency, which may be limited by the large expelling effect between Zn and impurity atoms and the compensation action from interstitial Znint atoms that can offer donor states to compensate the acceptors.
To decrease the expelling and the compensation effect, composite dopants, such as N jointed with Ga, In, or Al are applied to codope ZnS nanocrystals.
As a result, ZnS nanocrystals in p-type with high doping density and efficient are completed.
American Psychological Association (APA)
Ma, Xiying. 2010. Study of the P-Type Doping Properties of ZnS Nanocrystals. Journal of Nanomaterials،Vol. 2011, no. 2011, pp.1-5.
https://search.emarefa.net/detail/BIM-510969
Modern Language Association (MLA)
Ma, Xiying. Study of the P-Type Doping Properties of ZnS Nanocrystals. Journal of Nanomaterials No. 2011 (2011), pp.1-5.
https://search.emarefa.net/detail/BIM-510969
American Medical Association (AMA)
Ma, Xiying. Study of the P-Type Doping Properties of ZnS Nanocrystals. Journal of Nanomaterials. 2010. Vol. 2011, no. 2011, pp.1-5.
https://search.emarefa.net/detail/BIM-510969
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-510969