High-speed response si pin photodetector fabricated and studied for visible and near infrared spectral detection

Abstract EN

In the present work, PIN photo detector has been fabricated by vacuum evaporation technique, Al was evaporated on top side of an intrinsic – type silicon and In was evaporated on down side and doped for each sides of an intrinsic silicon with thermal diffusion technique using a furnace system, in this method PIN photo detector is made.

The optoelectronic and electrical properties of photo detector were studied, PIN has spectral responsively in visible and near infrared region and has peak responsively at wavelength 900nm, I-V characteristic under dark condition the ideality factor is 3.2 and built-in- potentials was determined by extrapolation of the curve (1 / C3) to a point 1 / C3 = 0 equal 0.8v.

A high speed response for the photo detector was determined; it is equal less than 2.35nS.