Study optoelectronic properties of ag2O heterojunction prepered by thermal oxidation technique

Abstract EN

Highly (101)-oriented p-Ag2O thin film with high electrical resistively was grown by thermal oxidation (TO) on clean monocrystalline p-type Si without any post- deposition annealing.

From optical transmittance and absorptance data, the direct optical band gap was found to be 1.4eV.

The electrical and photovoltaic properties of Ag2O / Si isotope heterojunction were examined in the absence of any buffer layer.

Ideality factor of heterojunction was found to be 3.9.

Photo response result revealed that there are two peaks located at.

750nm and 900nm.