Fabrication and study se sb on silicon detector heterojunction

Abstract EN

The optical response characteristics of Se / Sb thin film heterojunction deposited on a p-type silicon substrate were studied.

Results indicated that the obtained isotope heterojunction is linearly graded and has 0.8V built-in potential.

Also, the maximum spectral responsively and maximum quantum efficiency were obtained at the region of (600- 650) nm and the directivity was about 7.77x1010 cm.

Hz 1 / 2.

W -1.

Response time of the manufactured detector was about 225ns.

This work is a good attempt to manufacture the heterojunction detector from V and VI elements.