Optical method to determine the orientation of monocrystalline silicon wafers

Abstract EN

In this work, an optical method was used for the determination of the crystalline orientation of the chemically etched silicon surfaces in the (111), (110) and (100) planes.

This method depends on the light patterns of laser beam reflected from the monocrystalline surfaces.

The optical method submits acceptable measuring accuracy and well-distinguished folded patterns.-