Gain characteristics of silicon transistor treated by laser

Abstract EN

In this work, profiles of laser-induced diffusion of arsenic in silicon are presented.

These profiles are considered to attempt increasing of the current gain of silicon transistors.

The current gain is well enhanced.

This enhancement is attributed to the increase achieved in the diffusion length within a certain layer of emitter region.

Laser induced diffusion is a perfect technique for improving the characteristics of electronic devices since it is flexible, contactless, clean and well controlled.