Study of the characteristics of porous silicon by electrochemical etching

Abstract EN

In this work, the nanocrystalline porous silicon layer is prepared by electrochemical etching of p-type silicon wafer.

The morphological films characterized have been studied of the by atomic force microscopy, XRD and FTIR spectroscopy.

The atomic force microscopy investigation shows the average diameter pore is increasing with increase of etching time.

The X-ray diffraction investigates of the porous silicon layer is shown the broadening the width of the peak compare with the bulk silicon is directly correlated to the size of the nano-scale.

The FTIR spectra for porous silicon are shown that the dominant bonds being Si-H groups.