Characteristics model for AlGaN GaN HEMTs using tcad-silvaco
Joint Authors
Dayuara, Abd al-Malik
Djellouli, Bouaza
Ribhi, Abd al-Aziz
Zayyan, Abd al-Razzaq
Belkadi, Nabil
Source
Journal of New Technology and Materials / Larbi Ben M'hidi Oum el-Bouaghi University.
Publisher
Larbi Ben M'hidi Oum el-Bouaghi University
Publication Date
2014-12-31
Country of Publication
Algeria
No. of Pages
6
Main Subjects
English Abstract
We report some results the drain current characteristics of AlGaN/GaN HEMT(High Electron Mobility Transistor).
on are simulated by changing the different device parameters such as Al content x and the barrier thickness for different values of the gate voltage using Tcad-Silvaco numerical simulation software.
Drift–diffusion model has taken for simulating the proposed device.
we use SiC as a substrate for this structure, The channel is made of GaN and source-drain spacing is 1 μm.
Data Type
Conference Papers
Record ID
BIM-551199
American Psychological Association (APA)
Dayuara, Abd al-Malik& Djellouli, Bouaza& Ribhi, Abd al-Aziz& Zayyan, Abd al-Razzaq& Belkadi, Nabil. 2014-12-31. Characteristics model for AlGaN GaN HEMTs using tcad-silvaco. International Conference on New Materials and Active Devices (2st : 2014 : Umm al-Bawaqi, Algeria). . Vol. 4, no. 2 (2014), pp.19-24.Oum el-Bouaghi Algeria : Larbi Ben M'hidi Oum el-Bouaghi University.
https://search.emarefa.net/detail/BIM-551199
Modern Language Association (MLA)
Dayuara, Abd al-Malik…[et al.]. Characteristics model for AlGaN GaN HEMTs using tcad-silvaco. . Oum el-Bouaghi Algeria : Larbi Ben M'hidi Oum el-Bouaghi University. 2014-12-31.
https://search.emarefa.net/detail/BIM-551199
American Medical Association (AMA)
Dayuara, Abd al-Malik& Djellouli, Bouaza& Ribhi, Abd al-Aziz& Zayyan, Abd al-Razzaq& Belkadi, Nabil. Characteristics model for AlGaN GaN HEMTs using tcad-silvaco. . International Conference on New Materials and Active Devices (2st : 2014 : Umm al-Bawaqi, Algeria).
https://search.emarefa.net/detail/BIM-551199
