Preparation and characterization of Nano porous silicon for chemical detection applications

Abstract EN

In this research Photo-electrochemical etching process was used to prepare nano porous silicon from n-type Si.

The characteristics of Silvered porous silicon samples (active-substrate), were studied as substrates in terms of surface-enhanced Raman scattering (SERS) phenomena.

Maximum of (SERS) enhancement for Cresyl violet (CV) dye was obtained.

The active substrate was prepared by the immersion plating from the water solution of AgNO3 with the (10-2M) concentration during (5min).

The relation between the etching parameters, morphology of porous silicon surface and its SERS efficiency after silver deposition is examined.

We show that the nano (PSi) allows the formation of a film with close-packed silver nano crystals, which possess strong surface enhancement properties.