Effect of the holding intensity on the time delay in indium antimonide etalon

Abstract EN

ty has been observed in؛$Time delay dependent holding inten InSb using a low power cwco laser.

For different stand-off from the switeh point the time delay dependent frequency has been observed lOKHz and ء sec for low frequency^ ؤ ء which shoe's a delay up to l 1.5%).

fhe results shoe's؛؛=high stand-off from the switch point (Ap 2.5% from the switch point at 300 KHz the ؛؛= for a small standoff time delay become less until we reach to the overdriven condition.

INTRODUCTION From the point of the interest in optical bistable device in all-optical integrated circuits and optical computers, the switching operation can be considered one of the most important optical bistable device functions.

However, in the case of critical slowing down a significant time delay To before the device stt'ishes ON can be observed depending on the holding power with respect to the switching power.

The measurement of the delay to switch close to switching for 'ااه1 Where they found a scaling .ا'ا point has been pointed out by