A study of C (V)‎ characteristics of capacitors containing high-k oxides and high mobility carriers semi-conductors

Abstract EN

In this work, we proceeded to the analysis of C(V) characteristics of MOS capacitors (Metal-oxide-semi-conductor) with metal gates.

Within the framework of the search for new materials, we have studied C(V) characteristics of structures containing high permittivity oxide (high-k)- the HfO2 in our case- to replace the ultra-thin conventional oxide layer (SiO2 ) which reaches its physical and technological limits (less than 1 nm thickness).

In these same structures, the stacking of grid is deposited on a substrate with high mobility carriers (electrons and holes).

In fact: The germanium (Ge) and III-V materials [1].

The obtained results were largely compared with others simulated and experimental ones.