Structural and optoelectronical properties of In2S3 thin films prepared by CSP technique for solar cell application

Abstract EN

Indium Sulfide In2S3 window layer have been prepared by Chemical Spray Pyrolysis (CSP) at substrate temperate Equal (573 K) from Indium chloride and Thiourea were In/S ratio equal 1.2/8 in the spray solution, the samples prepared with different thicknesses (1.6, 1.7, 2.0 μm), the structural, optical and electrical of these films was investigated at different annealing temperature (Ta).X-ray diffraction studied shows the Structural properties of this layer are polycrystalline with preferred orientation 221, and have good improvement in the crystal structure at the annealing temperature (573K for 1h).

The grain size increase with increasing annealing temperature and the optical band gap was found in the range (2.4-2.55 eV) as a function of the film thicknesses and the annealing temperature.

Electrical studied of the sprayed and annealed sample shows n-type electrical conductivity, the mobility improved at the annealing temperature equal (573 K) but the resistivity decreased with this temperature.