Preparation and characterization of high quality SnO2 films grown by (HPCVD)‎

Abstract EN

In this research SnO2 thin films have been prepared by using hot plate atmospheric pressure chemical vapor deposition (HPCVD) on glass and Si (n-type) substrates at various temperatures.

Optical properties have been measured by UV-VIS spectrophotometer, maximum transmittance about (94%) at 400 0C.

Structure properties have been studied by using X-ray diffraction (XRD) , its shows that all films have a crystalline structure in nature and by increasing growth temperature from(350-500) 0C diffraction peaks becomes sharper and grain size has been change.

Atomic force microscopy (AFM) uses to analyze the morphology of the Tine Oxides surface structure.

Roughness & Root mean square for different temperature have been investigated.

The results show that both increase with substrate temperature increase this measurements deal with X-Ray diffraction results, that there is large change in the structure state of SnO2 thin f film by changing temperature parameter.