'I-V characteristic and crystal structural of a-as c-si heterojunctions

Abstract EN

In this research the a-As flims have been prepared by thermal evaporation with thickness 250 nm and rata of deposition (1.04nm/sec) as function to annealing temperature (373 and 373K), from XRD analysis we can see that the degree of crystalline increase with , and I-V characteristic for dark and illumination shows that forward bias current varieties approximately exponentially with voltage bias.

Also we found that the quality factor and saturation current dependence on annealing temperatures.