The barrier height and the series resistance of Ag SnO2 Si Au schottky diode determined by cheung and lien methods

Abstract EN

Electronic parameters of Ag/SnO2 /Si/Au Schottky diode (SD) determined by Cheung and Lien methods are extracted using the current-voltage (I-V) and the capacitance-voltage (C-V) characteristics.

Such SD is fabricated by the spray pyrolysis and the metallic contact is achieved by thermal evaporation process in vacuum.

To determine more parameters of SD, the quantities like dV/dlnI, H(I) and Ga(V) are introduced.

The non-ideal behavior of SD is confirmed, n=4.86 (n>1), the barrier height B and the series resistance Rs are found to be 0.62 V and 585 Ω (by dV/dlnI), 524.5Ω (by H(I).

The use of C-V and C-²-V plots allow us to determine the density of acceptor (Na) and diffusion potential (Vd), at a kept frequency of 1MHz, of 7.8 1021 cm-3 and 0.49 V respectively.

The profile of C-V, measured at various frequencies, reveals a p type of as fabricated SD where tin oxide layer is doped with 4% indium.