استعمال تقنية تجويد الخوارزمية الوراثية متعددة الأهداف لتصميم المقاحل الثنائية البوابات و العالية الكفاءة في المجال النانومتري

Abstract EN

Joint connection between the complexity degree of systems used in different technical fields and the increase of interest in optimization methods has been observed, which reflects their promising efficiency in dealing with many problems that were intractable with respect to the traditional exact approaches.

The aim in this work is to propose an integrated approach based on a multiobjective genetic algorithm in order to improve the nanoscale Double Gate (DG) MOSFET performance.

After mathematical modeling of various objective functions, a multiobjective genetic algorithm was used to tune up the design parameters corresponding to the best solution in term of Pareto optimality concept.

The comparison of the simulation results and arbitrary chosen configurations shows that the adopted framework allows providing better DG MOSFET characteristics at nanoscale level in addition to the reduction of the short channel effects.