Preparation and study the electrical properties of sb2(1-x)‎se3x thin films by pulse laser deposition technique

Abstract EN

The alloys of Sb2(1-x)Se3x were prepared by quenching technique with different concentrations of Se (x = 0.1, 0.3 and 0.5).

Thin films of these alloys were prepared using pulsed laser deposition (PLD) technique under vacuum of 10-3 mbar on glass substrates at room temperature and different annealing temperatures (373 and 473) K with Nd:YAG pulse laser of wavelength (1064 nm ), which enabled quality factor of a repetitive rate (6 Hz) and pulse duration (10 ns) and energy laser (1000 mJ)..

The D.C measurements declared two activation energy and hence two transport mechanism for Sb2(1-x)Se3x thin films.

The values of activation energies increase while σRT decreases with increasing of concentration of Se and the activation energies decrease while σRT increases with increasing of annealing temperatures.

Hall effect measurements show that the Sb2(1-x)Se3x thin films p-type.

Concentration of charge carriers nH increases with increasing concentration of Se, also charge carriers nH decreases with increasing of annealing temperatures, while the mobility μH and the conductivity (σ) showed opposite behavior to that.