Synthesis and study the optical properties of Ge20 Bix Se80-x thin films

Abstract EN

The optical properties of Ge??Bi?Se???? thin film at x ? 0, 0.2 and 0.6 deposited on glass substrate with thickness of (205 ? 50 nm ) was prepared using thermal evaporation technique.

X-ray diffraction has been study and show amorphous crystalline for the films prepared with different concentration of Bismuth and annealed at temperatures 373 K and 473 K at one hour.

A study of the absorption spectrum in the wavelengths (300-900) nm has been used to calculated the optical energy ?Eg???? of the samples.

The results show a decrease in the value of the optical energy with increase in Bismuth concentration in the sample, while increase (1.5-2)eV with increase of the temperature of annealing from 373 K to 473 K.