Structural and optical properties of CdO and CdO0.99Cu0.01 thin films prepared by pulsed laser deposition technique

Abstract EN

Structural and optical properties of CdO and CdO0.99Cu0.01 thin films were prepared in this work.

Cadmium Oxide (CdO) and CdO0.99Cu0.01semiconducting films are deposited on glass substrates by using pulsed laser deposition method (PLD) using SHG with Qswitched Nd:YAG pulsed laser operation at 1064nm in 6x10-2 mbar vacuum condition and frequency 6 Hz.

CdO and CdO0.99Cu0.01 thin films annealed at 550 C̊ for 12 min.

The crystalline structure was studied by X-ray diffraction (XRD) method and atomic force microscope (AFM).

It shows that the films are polycrystalline.

Optical properties of thin films were analyzed.

The direct band gap energy of CdO and CdO0.99Cu0.01 thin films were determined from (αhυ)1/2 vs.

photon energy curve and found to be 2.3 eV for CdO thin film, comparing with that the CdO0.99Cu0.01film which found to be 2.2eV.

The electrical measurements shows that the conductivity and mobility of the charge carriers increase when Cu doped CdO.