دراسة حركية التحولات الطورية ضمن شروط الحرارة المتغيرة لمواد زجاجية شالكوجينية باستخدام تقنية الماسح الحراري التفاضلي

Abstract EN

The present work presents a study on the thermal induced phase transformation (crystallization) in the system GeSe2-xSnx, where (x = 0, 0.2, 0.4, 0.6, 0.8, 1).

At different heating rates, the glass transition temperature (Tg) and the crystallization temperature (Tc) are obtained from the non-isothermal differential scanning calorimetry (DSC) measurements of powder chalcogenide glasses prepared by melt quenching technique.

Their amorphous state was verified using X-ray diffraction (XRD).

It was observed that the (Tg) and (Tc) both increase with increasing heating rates but decrease by increasing Sn concentration in the system.

The activation energy of crystallization (E), and the Avrami exponent (n) have been determined from the dependence of Tg and Tc on the heating rate.

The kinetic analysis indicate that the crystallization in the parent sample GeSe2 proceeds through two-dimensional growth.

The substitution of Se content by Sn increased the dimension of growth to three dimensions.

The crystallization kinetic study of glass was also studied by using the modified Kissinger and Takhor models