Surface recombination velocity of the LPE grown P (Al.86 Ga.l4 As)-P (GaAs)-N (GaAs) solar cells
Other Title(s)
دراسة تأثير سرعة الالتحام السطحية في الخلايا الشمسية من نوع (Al.86 Ga.l4 As)-P (GaAs)-N (GaAs)المحضرة بطريقة النمو من الحالة السائلة
Source
Journal of al-Qadisiyah for Pure Science
Issue
Vol. 17, Issue 2 (30 Jun. 2012), pp.1-10, 10 p.
Publisher
al-Qadisiyah University College of Science
Publication Date
2012-06-30
Country of Publication
Iraq
No. of Pages
10
Main Subjects
Natural & Life Sciences (Multidisciplinary)
American Psychological Association (APA)
Farhud, Abd al-Amir Kazim. 2012. Surface recombination velocity of the LPE grown P (Al.86 Ga.l4 As)-P (GaAs)-N (GaAs) solar cells. Journal of al-Qadisiyah for Pure Science،Vol. 17, no. 2, pp.1-10.
https://search.emarefa.net/detail/BIM-757378
Modern Language Association (MLA)
Farhud, Abd al-Amir Kazim. Surface recombination velocity of the LPE grown P (Al.86 Ga.l4 As)-P (GaAs)-N (GaAs) solar cells. Journal of al-Qadisiyah for Pure Science Vol. 17, no. 2 (2012), pp.1-10.
https://search.emarefa.net/detail/BIM-757378
American Medical Association (AMA)
Farhud, Abd al-Amir Kazim. Surface recombination velocity of the LPE grown P (Al.86 Ga.l4 As)-P (GaAs)-N (GaAs) solar cells. Journal of al-Qadisiyah for Pure Science. 2012. Vol. 17, no. 2, pp.1-10.
https://search.emarefa.net/detail/BIM-757378
Data Type
Journal Articles
Language
English
Notes
Record ID
BIM-757378
