تقريب الاحتواء القوي للشوائب المانحة في نقاط كم كروية GaAs تحت تأثير الضغط الهيدروستاتيكي

Abstract EN

This paper calculates first–order energy correction for the states s and p of shallow hydrogenic impurity in center,interior and exterior GaAs spherical quantum dots under the effect of hydrostats pressure.

These calculations studied by using the strong confinement approachwithinthe effective mass approximation,which consider the size of the quantum dot, must be smaller than effective Bohr radius.

Hydrostatic pressure rise quantum confinement of impurity interior Q.D,thus,energy correction increases for any radius of Q.D and position of impurity.

These correctionsdepend on the position of impurity and pressure effect at the minimum value at the edge of Q.D.