Carrier heating effects in quantum dot semiconductor optical amplifiers

Abstract EN

In this paper, we are introduce a new model to simulate the influence of carrier heating in quantum dot optical amplifiers.

depending on density matrix theory, rate equations for two-level and the analytical solution of pulse propagation in quantum dot (QD) the nonlinear gain coefficient due carrier heating has been derive.

The effects of energy splitting, detuning, carrier density and time of spectral hole burning versus nonlinear gain coefficient have been investigated.Also, the time recovery of ground state (GS) with carrier heating effects hasbeen calculated, the resultsshows a good agreement with research.