Single layer anti-reflective (AR)‎ coating silicon solar cells using simulation program

Abstract EN

In this study, the simulated single layer Anti-Reflected Coating (ARC) on silicon solar cell that based on the refractive index limit of silicon dioxide (SiO2), zinc oxide (ZnO) and zinc sulphide (ZnS) are presented.

Two simulations of (ZnO) and (ZnS) coating were simulated to compare with (SiO2) ARC on silicon solar cell surface.

These simulations were carried out with variable coating thicknesses, which are (30-90) nm by using PC1D simulation.

From the simulation obtained, it was found that the values of efficiency percent (η%) are maximum (18 and 19%) for silicon solar cell with thickness coating range (d = 60 and 80) nm for (ZnO) and (ZnS) respectively.

As for the ARC simulation, the external quantum efficiency (EQE) of (ZnO) and (ZnS) coating was increased around (300 to 500) nm for (ZnO) and (300 to 700) nm for (ZnS) respectively, which are capable of reducing the reflectivity over a wide range of wavelengths.

This can be concluded that when the refractive index value is high, the available photocurrent also can be high in wide range wavelength and the reflectivity more reducing.

In ARC analysis, (ZnO) coating could perform more efficiency on compared to (SiO2) and (ZnS).

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