Scrutiny of the dynamics of quantum dot semiconductor lasers

Abstract EN

The present paper introduces a numerical simulation results of the study from semiconductor quantum dot laser via the solution of four- equations model that describe temporal variations of carrier numbers in the wetting layer, , in the two- fold degenerate ground state, , and in the four- fold degenerate excited state, , and the number of photons, S, emitted from the GS.

Varieties of dynamics have been seen to occur as a result of the variation of the parameters that appeare in the above mentioned model.