Theoretical investigation of δ-doped double barriers GaAs AlGaAs RTDs at varying device geometry and temperature dependence

Abstract EN

In this article, we proposed a new concept of Si-delta doping in double barrier resonant tunneling diode heterostructure.

The double barrier resonant tunneling diodes (DBRTDs) are investigated through the technique of contact block reduction (CBR) incorporating nonequilibrium Green‟s function (NEGF) of a quantum structure in ballistic limits.

This paper addresses the diverse characteristics of DBRTDs with variation in device parameters like barriers length, doping concentration and spacer layer.

Dependence of operating temperature with the device geometry is also mentioned along with variation of Si-delta doping.

Sharp delta doping of 1nm splits the well in two parts and study of current ratios and current density JP.

Improvement in the performance of this semiconductor device has been utilized by this study with different device parameters.

Furthermore, the comparison of these electrical properties with existing devices provide effective relation of Negative differential resistance (NDR), current ratio, conductance and band gap with device parameters variations which provide abilities of this device to ostentatious the functionality.

Nextnano3 tool provide these characteristics and validate them with experimental research work existing in the literature survey.