Effects of enhancement P+ layer on IGBT operation
Joint Authors
Nasir, Wail Y.
Assafli, Haydar T.
Ghazi, Inmar N.
Source
Engineering and Technology Journal
Issue
Vol. 36, Issue 5A (31 May. 2018), pp.582-585, 4 p.
Publisher
Publication Date
2018-05-31
Country of Publication
Iraq
No. of Pages
4
Main Subjects
Engineering & Technology Sciences (Multidisciplinary)
Abstract EN
IGBT (Insulated-gate bipolar transistor), is used widely in high voltage applications, it is very important to realize the doping profile in order to understand the design and the electrical performances of such devices.
The performance depends on the layer, doping, and a carrier distribution among each layer.
A specific selected layer can be added with precise properties for enhancing the device and increase the low current operate requirement.
In this paper, an IGBT device is an enhanced and better performance achieved by the addition of a heavily positive doped intermediate layer.
The collector current is decreased from 0.05 mA to 0.03 mA at 600 V.
Decreasing the current results in higher efficient device by decreasing the amount of heat produced by the device.
American Psychological Association (APA)
Ghazi, Inmar N.& Assafli, Haydar T.& Nasir, Wail Y.. 2018. Effects of enhancement P+ layer on IGBT operation. Engineering and Technology Journal،Vol. 36, no. 5A, pp.582-585.
https://search.emarefa.net/detail/BIM-831265
Modern Language Association (MLA)
Ghazi, Inmar N.…[et al.]. Effects of enhancement P+ layer on IGBT operation. Engineering and Technology Journal Vol. 36, no. 5A (2018), pp.582-585.
https://search.emarefa.net/detail/BIM-831265
American Medical Association (AMA)
Ghazi, Inmar N.& Assafli, Haydar T.& Nasir, Wail Y.. Effects of enhancement P+ layer on IGBT operation. Engineering and Technology Journal. 2018. Vol. 36, no. 5A, pp.582-585.
https://search.emarefa.net/detail/BIM-831265
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references : p. 585
Record ID
BIM-831265
