Study of different parameters effects on threshold voltage of CNTFET

Abstract EN

In this paper, we have studied the effect of different parameters on threshold voltage of CNTFET dences using a numerical model developed with the Non-Equilibrium Greens Function approach in real space.

In fact, the work in hand involves the Vjh as a function of length gate taken from 10 nm to 30 nm for different temperature namely: 77 K, ISO K, 300 K, 400 K then the variation ofVjji as a function of the nanotube diameter varying over the following chiralities : <13, 0), (16, 0), (19,0), (23, 0), (25, 0) was undertaken.

Afterworlds, we conducted the wriation of Vjh as a function of the oxide thickness with the values: 1.5 nm, 3 nm, 4.5nm, 6 nm and 7 nm.

Moreover, theVjfj was carried at depending upon the high-k materials such as: SiOt, HfOi, ZrOi, T&2O2 mid T1O2 And the source/drain doping used are 2.5 m-1, 4 m-1, 6 771“*, 8 m-*, and 10 m-1 ^~0.01 dopant/atom).

Finally, a conclusion is made basing at the different findings which rewaled that the best reduce oNj# was recorded under a liquid Nitrogen temperature of 77 K.