Effecte of thermal annealineg on the electrcal properties of PbS Si heterojunction
Author
Source
Issue
Vol. 2, Issue 2 (31 Dec. 2010)6 p.
Publisher
University of Kufa Faculty of Science Department of Physics
Publication Date
2010-12-31
Country of Publication
Iraq
No. of Pages
6
Main Subjects
Abstract EN
In this research the electrical properties for heterojunction devices have been improved by process of simple annealing temperature about one hour period.
The results have been explained that the influential of analysis process on electrical properties during the clearest improve for devices properties at special temperature .In this research the electrical properties for heterojunction devices have been improved by process of simple annealing temperature about one hour period.
The results have been explained that the influential of analysis process on electrical properties during the clearest improve for devices properties at special temperature .
American Psychological Association (APA)
Jawad, Zuhayr Husayn. 2010. Effecte of thermal annealineg on the electrcal properties of PbS Si heterojunction. Journal of Kufa-Physics،Vol. 2, no. 2.
https://search.emarefa.net/detail/BIM-884628
Modern Language Association (MLA)
Jawad, Zuhayr Husayn. Effecte of thermal annealineg on the electrcal properties of PbS Si heterojunction. Journal of Kufa-Physics Vol. 2, no. 2 (2010).
https://search.emarefa.net/detail/BIM-884628
American Medical Association (AMA)
Jawad, Zuhayr Husayn. Effecte of thermal annealineg on the electrcal properties of PbS Si heterojunction. Journal of Kufa-Physics. 2010. Vol. 2, no. 2.
https://search.emarefa.net/detail/BIM-884628
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-884628
