Titanium dioxide thin film prepared by sol-gel technique

Abstract EN

A titanium oxide thin film was prepared by Sol-gel technique, deposited on glass substrates using TiO2 precursor Titanium (IV)butoxideTi(OCH2CH2CH2CH3)4, .The surface topography and structural properties of these films were studied by using scanning electronic microscopy (SEM) and X-ray diffraction techniques.

According to the X-ray diffraction spectra, TiO2 thin films were formed with a anatase type phase and tetragonal unit cell with a preferred orientation along (110) plane.Optical and electrical properties of thesesamples were analysed.

Parameters such as band gap (Eg), extinction coefficient (k), absorption coefficient (α),dielectric constant (ε), refractive index, (n)and resistivity (ρ) were calculated using the data obtained from different measurements.

the optical band gaps found to be 3.56 eV and 3.26 eV for direct and indirect process,respectively.

And The optical and structural characterizations showed that the samples have good transmition in the visible and near infrared (NIR) region of the spectrum.

The samples have very low reflectance within the visible region and the absorption coefficient decreases with increasing thickens.