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Study the effect of different silicon substrate resistivities on the photoluminescence results
Other Title(s)
دراسة تأثير المقاومة النوعية المختلفة للسيليكون على نتائج التلؤلؤ الضوئي
Author
Source
Issue
Vol. 11, Issue 1 (30 Jun. 2019), pp.71-75, 5 p.
Publisher
University of Kufa Faculty of Science Department of Physics
Publication Date
2019-06-30
Country of Publication
Iraq
No. of Pages
5
Main Subjects
Abstract EN
The silicon-based electroluminescent devices are most commonly used in recent years, especially in optical equipment.
The physical properties of the photoluminescence are investigated experimentally in this paper.
The silicon substrate resistivity is tested dependence of the photoluminescence of porous.
The formation current density of p-type and highly doped p-type silicon are studied.
It is found that using 40 mA/cm2 as a formation current density produced a large number of contributing nano crystals.
The applied low current caused a weak photoluminescence intensity, and the increasing of the formation current density led to increase the contributing Nano crystallizes.
For the optimum case with smaller nanocrystallite sizes, the photoluminescence intensity decreased by the fast etching process, and the high current density produced a small number of nanocrystallite sizes and very weak photoluminescence.
The higher resistivity doesn’t give a higher intensity and better results in photoluminescence of used porous silicon.
American Psychological Association (APA)
Numan, Najwan Husayn. 2019. Study the effect of different silicon substrate resistivities on the photoluminescence results. Journal of Kufa-Physics،Vol. 11, no. 1, pp.71-75.
https://search.emarefa.net/detail/BIM-892297
Modern Language Association (MLA)
Numan, Najwan Husayn. Study the effect of different silicon substrate resistivities on the photoluminescence results. Journal of Kufa-Physics Vol. 11, no. 1 (2019), pp.71-75.
https://search.emarefa.net/detail/BIM-892297
American Medical Association (AMA)
Numan, Najwan Husayn. Study the effect of different silicon substrate resistivities on the photoluminescence results. Journal of Kufa-Physics. 2019. Vol. 11, no. 1, pp.71-75.
https://search.emarefa.net/detail/BIM-892297
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references : p. 74-75
Record ID
BIM-892297