Studying the effect of annealing temperature on some physical properties of In2O3 thin film

Abstract EN

In this study, In2O3 thin films were deposited on quartz substrates by pulsed laser deposition technique at room temperature and followed by thermally annealing at 300 ℃ , 400 ℃ and 500 ℃ for 1 hour.

The optical band gap was found to increase with the annealing temperature from 3.5 to 3.85 eV and the transmittance was observed above 90%.

XRD results show that the films are polycrystalline in nature and crystallizes with preferred orientation (222).

SEM images show that the films are high homogenous and they contained uniformly distributed small grains