Manufacturing Zener diode using ZnO-CuO-ZnO PSi structures deposited laser-induced plasma technique

Abstract EN

In this paper, Zener diode was manufactured using ZnO-CuO-ZnO/PSi heterostructure that used laser-induced plasma technique to prepare the nanostructure films.

Five samples were prepared with a different number of laser pulses, started with 200 to 600 pulses on ZnO tablet with fixed the number of laser pulses on CuO tablet at 300 pulses.

The pulse energy of laser deposited was 900mJ using ZnO tablet and 600mJ using CuO tablet.

All prepared films shown good behavior as a Zener diode when using porous silicon as substrate.