Effect of Cu doping on the electrical properties of ZnTe by vacuum thermal evaporation

Abstract EN

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2 × 10-5mbar) at RT.

Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7 %) of the Cu element on the thin ZnTe films.

The temperature ranges of (25- 200°C) is to record the electrical conductivity values.

The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu.

The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5 %) respectively.

The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1 × 1020 m-3) , Hall mobility (0.464m2 / V.s) for pure ZnTe film, increases the carrier concentration (6.3 × 1021m-3) Hall mobility (2m2 / V.s) for doping (Cu at 3 %) film, but decreases by increasing Cu concentration.