Characterization of new quaternary chalcogenide Sb-Bi-Se-in thin films

Abstract EN

Investigated in this paper is the effect of replacement of indium by Selenium on the optical gap and some other physical operation parameters of new quaternary chalcogenide Sb2oBi > oSe60-Jnx (where x = 0,10, 20 and 30 at %) thin films.

Thin films with the thickness 100 nm of Sb2oBi2oSe«o^Inz were prepared using thermal evaporation of bulk samples.

Increasing indium content was found to affect the average heat of atomization, average coordination number, number of constraints and cohesive energy of the Sb2oBi2oSe«o-xInx alloys.

Optical absorption is due to allowed non-direct transition and the energy gap decreases with increasing indium content.

The chemical bond approach has been applied successfully to interpret the decrease in the optical gap with increasing indium content.

The prepared films were irradiated by gamma radiation at doses up to l?Mrad.It was found that the compositions were almost stable against gamma radiation.