Synthesis, characteristics and study the photoluminscience of the CdSxSe1-x nanocrystaline thin film

Abstract EN

The present work focuses on the changing of the structural characteristics of the grown materials through different material characterization methods.

Semiconductor CdSxSe 1-x nano crystallines have been synthesized by chemical vapor depostion.

(X- ray Diffraction; XRD), (Field Emission Scanning Electron Microscopy; FESEM), measured the characterization of Semiconductor CdSxSe1-x nano crystallines.

The optical properties of semiconductor CdSxSe1-x nanocrystallines have been studied by the photoluminescence (PL) (He-Cd pulsed ultraviolet laser at 325nm excitation wavelength) at room temperature.

The results showed the change rule of photoluminsence peak at different S/Se ratios according to the photoluminsence spectral analysis technology.

The photuminscence peak can be continuously modulated between (500- 650) nm, so the tunable emission of the materials in the present work have novle applications in the area of bioscience and spectroscopy, etc.