Effect of SiO2 mixing on structural properties of ZnO thin films prepared by pulsed laser deposition (PLD)‎ technique

Abstract EN

In this paper, ZnO was mixed by various concentrations (5,10,15,20,25) w% SiO2.

The mixture was deposited on glass substrate by laser pulse deposition at room temperature.

X-ray results showed that there was a decrease in the peaks of zinc oxide with gradual peaks of the zinc silicate compound at angles 2Ө 2) due to the increase in silicon oxide concentrations rates.

The infrared spectrometer Fourier transform was used to study all prepared films and gave good results about the chemical bonds of the composite and their locations and correspond to the standard results of the zinc silicate compound.

The results of the atomic force microscope showed that all of prepared films were having nano scale size and there was an increase in square root roughness index.