A electron transport study on ultrathin armchair graphene nanoribbone

Abstract EN

-Using first-principles quantum transport simulations, this work examines changes in the total electronic currents within the plane of short ultrathin graphene nanoribbon with armchair edges (AGNR).

A 5-AGNR-M (M = 4,12,20 and 28 zigzag line) junction was simulated and its transmission were analyzed.

The I-V curves under external bias exhibit remarkable semiconducting characteristics.

It further demonstrates that the length of the junction also showed significant effects in the determination of the semiconducting nature.

More importantly, a significant increasing by double in bias voltage threshold of I–V characteristics have been observed for the positively charged nanoribbon in the family of 5-AGNRs.