Gas sensing of (SnO2)‎1-x (ZnO)‎x composite films associating with structural and electrical properties

Abstract EN

Semiconductor-based gas sensors were prepared, using n-type tin oxide (SnO2) and tin oxide: zinc oxide composite [(SnO2)1-x(ZnO)x] at different atomic ratios (x) using pulsed laser deposition at room temperature, without any treatment.

The prepared thin films were examined in order to obtain the optimum conditions for gas sensing applications, using X-ray diffraction, Hall effect measurements, and direct current conductivity.

It was found that the optimum crystallinity and maximum electron density, corresponding to the minimum charge carrier mobility, appeared at 10% ZnO ratio.

This sample has the optimum gas sensitivity was 358 % against 10% NO2 gas appeared at 473 K working temperature.